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| SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAIL FZT753 FZT653 C E FZT653 B C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL MIN. 120 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 55 25 140 0.13 0.23 0.9 0.8 200 200 110 55 175 100 5 0.1 10 0.1 0.3 0.5 1.25 1.0 300 MHz 30 80 1200 pF ns ns SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE 120 100 5 6 2 2 -55 to +150 UNIT V V V A A A UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). CONDITIONS. IC=100A IC=10mA* IE=100A VCB=100V VCB=100V,Tamb=100C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE =2V* IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* IC=100mA, VCE =5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCC =10V IB1=IB2=50mA V V V V fT Cobo ton toff *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 209 FZT653 TYPICAL CHARACTERISTICS 0.6 0.5 225 - (Volts) 0.4 IC/IB=10 0.3 - Gain 175 VCE=2V 125 0.2 V 0.1 h 75 0 0.0001 0.001 0.01 0.1 1 10 25 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 1.2 - (Volts) 1.2 1.0 - (Volts) 1.0 IC/IB=10 VCE=2V 0.8 V 0.8 V 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 VBE(on) v IC td tr tf ns 280 ts ns 2800 Single Pulse Test at Tamb=25C IB1=IB2=IC/10 1 240 2400 Switching time 200 2000 ts 0.1 DC 1s 100ms 10ms 1ms 300s 160 1600 120 1200 tf 80 800 td 40 400 tr 0.01 0 0 0.01 0.1 1 0.1 1 10 100 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area 3 - 210 Switching Speeds |
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